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W19B32XMB

Features: Performance• 2.7~3.6-volt write (program and erase) operations• Fast write operation• Read access time: 70, 90 nS• Typical program/erase cycles: − 100K• Twenty-year data retention• Ultra low power consumption Architecture• Dual Bank archite...

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SeekIC No. : 004544453 Detail

W19B32XMB: Features: Performance• 2.7~3.6-volt write (program and erase) operations• Fast write operation• Read access time: 70, 90 nS• Typical program/erase cycles: − 100K•...

W19B32XMB Data Sheet

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Part Number:
W19B32XMB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Performance
• 2.7~3.6-volt write (program and erase) operations
• Fast write operation
• Read access time: 70, 90 nS
• Typical program/erase cycles: − 100K
• Twenty-year data retention
• Ultra low power consumption Architecture
• Dual Bank architectures
− W19B322M: bank1: 4M; bank2: 28M
− W19B323M: bank1: 8M; bank2: 24M
− W19B324M: bank1: 16M; bank2: 16M
• Security Sector Size: 256 Bytes
− The Security Sector is an OTP; once the sector is programmed, it cannot be erased
• Simultaneous Read/write operation
− Data can be continuously read from one bank while processing erase/program functions in other bank with zero latency
• JEDEC standard byte-wide and wordwide pinouts
• TTL compatible I/O
• Manufactured on WinStack 0.18m process technology
• Available packages: 48-pin TSOP and 48-ball TFBGA (8x11mm) Software Features
• Compatible with common Flash Memory Interface (CFI) specification
− Flash device parameters stored directly on the device
− Allows software driver to identify and use a variety of different current and future Flash products
• Erase Suspend/Erase Resume
− Suspends erase operations to allow programming in same bank
• End of program detection
− Software method: Toggle bit/Data polling
• Unlock Bypass Program command
− Reduces overall programming time when issuing multiple program command sequences Hardware Features
• Ready/#Busy output (RY/#BY)
− Detect program or erase cycle completion
• Hardware reset pin (#RESET)
− Reset the internal state machine to the read mode
• #WP/ACC input pin
− Write protect (#WP) function allows protection of two outermost boot sectors, regardless of sector protection status
− Acceleration (ACC) function accelerates program timing
• Sector Protection
− Sectors can be locked in-system or via programmer
− Temporary Sector Unprotect allows changing data in protected sectors insystem


Description

The W19B32XMT/B is a 32Mbit, 2.7~3.6 volt dual bank CMOS flash memory organized as 4M × 8 or 2M × 16 bits. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (× 8) data appears on DQ7−DQ0. The device can be programmed and erased in-system with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B32XMT/B results in fast program/erase operations with extremely low current consumption (compared to other comparable 3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.




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