W19B320BT/B

Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to - 2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VDD +0.5 V. During voltage ransitions,input or I/O pins may overshoot to VDD +2.0 V for periods up to 20 ns.
2. Minimum DC input voltage on pins A9, #OE, #RESET, and #WP/ACC is -0.5 V. During voltage transitions, A9, #OE,
#WP/ACC, and #RESET may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC input voltage on pin A9 is +11.5 V which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on #WP/ACC is +9.5 V
which may overshoot to +12.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.

The W19B320BT/B is a 32Mbit, 2.7~3.6-volt single bank CMOS flash memory organized as 4M x 8 or 2M × 16 bits. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears on DQ7-DQ0. The device can be programmed and erased in-system with a standard 3.0-volt power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B320BT/B results in fast program/erase operations with extremely low current onsumption (compared to other comparable 3- volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.