Maximum RMS Reverse Voltage
:
Forward Continuous Current
:
Power Dissipation
:
Packaging
: Bulk
Product
: Three Phase Bridge
Mounting Style
: Screw
Maximum Operating Temperature
: + 125 C
Peak Reverse Voltage
: 1200 V
Height
: 10 mm
Max Surge Current
: 330 A
Maximum Reverse Leakage Current
: 300 uA
Length
: 63 mm
Width
: 31.6 mm
Package / Case
: Kamm-Modul
Forward Voltage Drop
: 2.2 V
DescriptionThe VUC25-12GO2 is designed as three phase rectifier bridge with fast diodes and softstart thyristor. Typical applications include input rectifier for switching power supplies (SMPS), softstart capacitor charging, electric drives and auxiliaries.
VUC25-12GO2 has seven features. (1)Package with DCB ceramic base plate. (2)Isolation voltage 3600 V. (3)Planar passivated chips. (4)Fast recovery diodes to reduce EMI. (5)Separate thyristor for softstart. (6)Solderable terminals. (7)UL registered E 72873. Those are all the main features.
Some absolute maximum ratings of VUC25-12GO2 have been concluded into several points as follow. (1)Its IdAV would be 25A for diode. (2)Its IdAVM would be 28A for diode. (3)Its Itavm would be 26A for thyristor. (4)Its Ifsm would be 300A for diode and 330A for thyristor at t=10ms (50Hz), sine and 330A for diode and 370A for thyristor at t=8.3ms (60Hz), sine at Tvj=45°C and Vr=0 and it would be 270A for diode and 300A for thyristor at t=10ms (50Hz), sine and 300A for diode and 330A for thyristor at t=8.3ms (60Hz), sine at Tvj=Tvjm and Vr=0. (5)Its I2t would be 450A2s for diode and 545A2s for thyristor at t=10ms (50Hz), sine and 460A2s for diode and 575A2s for thyristor at t=8.3ms (60Hz), sine at Tvj=45°C and Vr=0 and it would be 365A2s for diode and 450A2s for thyristor at t=10ms (50Hz), sine and 380A2s for diode and 460A2s for thyristor at t=8.3ms (60Hz), sine at Tvj=Tvjm and Vr=0. (6)its (dv/dt)cr would be 200V/us. (7)Its Vrgm would be 10V. (8)Its Pgm would be max 10W at tp=3-us and would be max 1W at tp=10ms. (9)Its storage temperature range would be from -40°C to 125°C. And so on. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of VUC25-12GO2 are concluded as follow. (1)Its Ir, Id would be max 5mA at Tvj=Tvjm and would be max 0.3mA at Tvj=25°C. (2)Its Vf, Vt would be max 2.2V for diode and 1.5V doe thyristor. And so on. If you have any question or suggestion or want to know more information about VUC25-12GO2 please contact us for details. Thank you!
Parameters: | Technical/Catalog Information | VUC25-12GO2 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Diode Type | Three Phase |
| Package / Case | KAMM |
| Packaging | Bulk |
| Reverse Recovery Time (trr) | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - DC Forward (If) | 25A |
| Voltage - Peak Reverse (Max) | 1200V |
| Mounting Type | PCB |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | VUC25 12GO2
VUC2512GO2
|
VUC25-12go2 Data Sheet
