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VTT9003

SpecificationsMaximum TemperaturesStorage Temperature: ......................-40°C to 70°COperating Temperature:................... -40°C to 70°CContinuous Power Dissipation: ....................100mWDerate above 30°C: ...............................2.5 mW/°CMaximum Current:..........................

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SeekIC No. : 004544155 Detail

VTT9003: SpecificationsMaximum TemperaturesStorage Temperature: ......................-40°C to 70°COperating Temperature:................... -40°C to 70°CContinuous Power Dissipation: ....................100...

VTT9003 Data Sheet

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Part Number:
VTT9003
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

Maximum Temperatures
Storage Temperature: ......................-40°C to 70°C
Operating Temperature:................... -40°C to 70°C
Continuous Power Dissipation: ....................100mW
Derate above 30°C: ...............................2.5 mW/°C
Maximum Current:.......................................... 25 mA
Lead Soldering Temperature:........................ 260°C
(1.6 mm from case, 5 sec. max.) 


Description

A medium area high sensitivity NPN VTT9003 silicon phototransistor in a recessed TO-106 ceramic package. The chip is protected with a layer of clear epoxy. The base
connection is brought out allowing conventional transistor biasing. VTT9003 is spectrally matched to any of PerkinElmer IREDs.




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