Features: SpecificationsDescriptionA medium area NPN VTT7113 silicon phototransistor possessing high sensitivity and good speed mounted in a lensed,side looking,transparent plastic package.These devices are spectrally and mechanically matched to the VTE71xx sereis of IREDs. There are some absolut...
VTT7113: Features: SpecificationsDescriptionA medium area NPN VTT7113 silicon phototransistor possessing high sensitivity and good speed mounted in a lensed,side looking,transparent plastic package.These dev...
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A medium area NPN VTT7113 silicon phototransistor possessing high sensitivity and good speed mounted in a lensed,side looking,transparent plastic package.These devices are spectrally and mechanically matched to the VTE71xx sereis of IREDs.
There are some absolute maximum ratings about VTT7113.Maximum storage temprature is -40 to 85.Maximum operating temperature is -40 to 85.Continuous power dissipation is 50 mW. Derate above 30 is 0.91 mW/.Maximum current is 25 mA.
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