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VTT1222W

SpecificationsMaximum TemperaturesStorage Temperature: ........................-40°C to 100°COperating Temperature:..................... -40°C to 100°CContinuous Power Dissipation: ........................50 mWDerate above 30°C:................................ 0.71 mW/°CMaximum Current: .............

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SeekIC No. : 004544129 Detail

VTT1222W: SpecificationsMaximum TemperaturesStorage Temperature: ........................-40°C to 100°COperating Temperature:..................... -40°C to 100°CContinuous Power Dissipation: ....................

VTT1222W Data Sheet

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Part Number:
VTT1222W
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Specifications

Maximum Temperatures
Storage Temperature: ........................-40°C to 100°C
Operating Temperature:..................... -40°C to 100°C
Continuous Power Dissipation: ........................50 mW
Derate above 30°C:................................ 0.71 mW/°C
Maximum Current: .............................................25 mA
Lead Soldering Temperature:........................... 260°C
(1.6 mm from case, 5 sec. max.)


Description

A small area high speed NPN VTE12xxW silicon phototransistor mounted in a 5 mm diameter lensed, end looking, transparent plastic package. Detectors in this series have a half power acceptance angle (1/2) of 40°. These devices are spectrally and mechanically matched to the VTE12xxW series of IREDs.




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