SpecificationsMaximum TemperaturesStorage Temperature: .......................-40°C to 110°COperating Temperature:.................... -40°C to 110°CContinuous Power Dissipation: ......................250mWDerate above 30°C: ...............................3.12 mW/°CMaximum Current:...................
VTT1117: SpecificationsMaximum TemperaturesStorage Temperature: .......................-40°C to 110°COperating Temperature:.................... -40°C to 110°CContinuous Power Dissipation: ......................
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DescriptionVTT1016(H) Large area high sensitivity NPN silicon phototransistor in a flat lensed, he...
A large area high sensitivity NPN VTT1117 silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. VTT1117 is spectrally matched to the VTE11xx series of IREDs.