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VTT1117

SpecificationsMaximum TemperaturesStorage Temperature: .......................-40°C to 110°COperating Temperature:.................... -40°C to 110°CContinuous Power Dissipation: ......................250mWDerate above 30°C: ...............................3.12 mW/°CMaximum Current:...................

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SeekIC No. : 004544124 Detail

VTT1117: SpecificationsMaximum TemperaturesStorage Temperature: .......................-40°C to 110°COperating Temperature:.................... -40°C to 110°CContinuous Power Dissipation: ......................

VTT1117 Data Sheet

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Part Number:
VTT1117
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

Maximum Temperatures
Storage Temperature: .......................-40°C to 110°C
Operating Temperature:.................... -40°C to 110°C
Continuous Power Dissipation: ......................250mW
Derate above 30°C: ...............................3.12 mW/°C
Maximum Current:.......................................... 200 mA
Lead Soldering Temperature:.......................... 260°C
(1.6 mm from case, 5 sec. max.)


Description

A large area high sensitivity NPN VTT1117 silicon phototransistor in a lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments The base connection is brought out allowing conventional transistor biasing. VTT1117 is spectrally matched to the VTE11xx series of IREDs.




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