DescriptionThe VTH2090 is designed as pin photodiode which consists of a chip with a 9.2x9.2mm active area mounted in a black ceramic package with an epoxy window. This device is ideal for scintillation detection, spetrophotometry, CT scan, or other applications requiring a fast, large area, high ...
VTH2090: DescriptionThe VTH2090 is designed as pin photodiode which consists of a chip with a 9.2x9.2mm active area mounted in a black ceramic package with an epoxy window. This device is ideal for scintilla...
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The VTH2090 is designed as pin photodiode which consists of a chip with a 9.2x9.2mm active area mounted in a black ceramic package with an epoxy window. This device is ideal for scintillation detection, spetrophotometry, CT scan, or other applications requiring a fast, large area, high detectivity device.
VTH2090 has six features. (1)High quantum efficiency. (2)Excellent uniformity. (3)High shunt impedance. (4)Low junction capacitance. (5)Fast response. (6)Low noise. Those are all the main features.
Some absolute maximum ratings (at 25°C unless otherwise noted) of VTH2090 have been concluded into several points as follow. (1)Its maximum current would be 2mA. (2)Its maximum power dissipation would be 100mW. (3)Its maximum reverse voltage would be 50V for peak. (4)Its operating temperature range would be from -20°C to 60°C. (5)Its storage temperature range would be from -20°C to 70°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of VTH2090 are concluded as follow. (1)Its peak spectral response would be typ 980nm. (2)Its radiant sensitivity would be typ 0.25A/W for 480nm and would be typ 0.30A/W for 540mW and would be typ 0.40A/W for 633nm and would be typ 0.60A/W for 940nm. (3)Its short circuit current 100 lux would be min 65uA and typ 80uA. (4)Its dark current would be max 10nA at Vr=30V. (5)Its temperature coefficient would be typ 15%/°C. (6)Its junction capacitance would be typ 70pF at Vr=30V. (7)Its rise time would be typ 15ns. (8)Its noise equivalent power would be typ 4x10^-14W/Hz. (9)Its specific detectivity would be typ 2.6x10^13 cmHz/W. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!