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VTE3372LA

SpecificationsMaximum TemperaturesStorage and Operating:.............................................. -40°C to 100°CContinuous Power Dissipation:............................................... 100 mWDerate above 30°C: ..........................................................1.43 mW/°CMaximum Con...

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VTE3372LA: SpecificationsMaximum TemperaturesStorage and Operating:.............................................. -40°C to 100°CContinuous Power Dissipation:............................................... 100 ...

VTE3372LA Data Sheet

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Part Number:
VTE3372LA
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

Maximum Temperatures
Storage and Operating:.............................................. -40°C to 100°C
Continuous Power Dissipation:............................................... 100 mW
Derate above 30°C: ..........................................................1.43 mW/°C
Maximum Continuous Current: ...................................................50 mA
Derate above 30°C: ...........................................................0.71 mA/°C
Peak Forward Current, 10 µs, 100 pps: .......................................2.5 A
Temp. Coefficient of Power Output (Typ.): ...............................-.8%/°C
Maximum Reverse Voltage: ...........................................................5.0V
Maximum Reverse Current @ VR = 5V: ........................................10 µA
Peak Wavelength (Typical): ......................................................880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.): ...................................14 pF
Response Time @ IF = 20 mA
Rise:1.0 µs Fall: ..........................................................................1.0 µs
Lead Soldering Temperature: .....................................................260°C
(1.6 mm from case, 5 seconds max.)


Description

This VTE3372LA narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.




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