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VTE1163

SpecificationsMaximum TemperaturesStorage and Operating:.............................................. -55°C to 125°CContinuous Power Dissipation:............................................... 200 mWDerate above 30°C: ..........................................................2.11 mW/°CMaximum Con...

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VTE1163: SpecificationsMaximum TemperaturesStorage and Operating:.............................................. -55°C to 125°CContinuous Power Dissipation:............................................... 200 ...

VTE1163 Data Sheet

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Part Number:
VTE1163
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

Maximum Temperatures
Storage and Operating:.............................................. -55°C to 125°C
Continuous Power Dissipation:............................................... 200 mW
Derate above 30°C: ..........................................................2.11 mW/°C
Maximum Continuous Current: ..................................................100 mA
Derate above 30°C: ...........................................................1.05 mA/°C
Peak Forward Current, 10 µs, 100 pps: ...........................................3 A
Temp. Coefficient of Power Output (Typ.): ...............................-.8%/°C
Maximum Reverse Voltage: ...........................................................5.0V
Maximum Reverse Current @ VR = 5V: ........................................10 µA
Peak Wavelength (Typical): ......................................................880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.): ...................................35 pF
Response Time @ IF = 20 mA
Rise:1.0 µs Fall: ..........................................................................1.0 µs
Lead Soldering Temperature: .....................................................260°C
(1.6 mm from case, 5 seconds max.)


Description

This narrow beam angle TO-46 hermetic emitter VTE1163 contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.




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