DescriptionThis narrow beam angle TO-46 hermetic emitter VTE1113(H) contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.
VTE1113(H): DescriptionThis narrow beam angle TO-46 hermetic emitter VTE1113(H) contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.
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DescriptionThis wide beam angle TO-46 hermetic emitter VTE1013(H) contains a large area, double wi...