VTB5040J

The VTB5040J is desined as one kind of VTB process photodiodes. Planar silicon photodiode in a 'flat' window, dual lead TO-5 package. Cathode is common to the case. This diode has very high shunt resistance and good blue response. Its chip active area is 0.008in2 (5.16mm2).

Some absolute maximum ratings of VTB5040J have been concluded into several points as follow. (1)Its storage temperature range would be from -40°C to 110°C. (2)Its operating temperature range would be from -40°C to 110°C. Those are all the main absolute maximum ratings. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VTB5040J are concluded as follow. (1)Its short circuit current would be min 35uA and typ 45uA with test conditions of H=100 fc, 2850K. (2)Its Isc temperature coefficient would be typ 0.12%/°C and max 0.23%/°C with test conditions of 2850K. (3)Its open circuit voltage would have the typ value of 490mV with test ocnditions of H=100 fc, 2850K. (4)Its dark current would be max 100pA with test conditions of H=0 and Vr=2.0V. (5)Its shunt resistance would have the typ value of 1.4G with test conditions of H=0 and V=10mV. (6)Its Rsh temperature corfficient would have the typ value of -8.0%/°C with test conditions of H=0, V=10mV. (7)Its junction capacitance would have the typ value of 1.0nF with test conditions of H=0 and V=0. (8)Its sensitivity would have the typ value of 0.1A/W with test conditions of 365nm. (9)Its spectral application range would be min 320nm and max 1100nm. (10)Its spectral response would be typ 920nm for peak. (11)Its breakdown voltage would be min 2V and typ 40V. (12)Its ang. response 50% response Pt would be typ +/-45 degrees. (13)Its noise equivalent power would be typ 1.3x10^-14W/Hz. (14)Its specific detectivity would be typ 1.7x10^13 cmHz/W. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!