VT935G

The VT935G is designed as one kind of photoconductive CdS cells. This photocell consists of a thin film of photoconductive material on a ceramic substrate. A unique method of lead wire attachment provides metallurgical bonding of the wire to the electrode and rigid anchoring of the lead in the ceramic, thus eliminating the need for conductive pastes. A thin plastic coating provides protection for the active surface.

VT935G has four features. (1)Low cost. (2)Exceptional temperature stability. (3)Fast response time. (4)Excellent chopping capability. Those are all the main features.

Some absolute maximum ratings of VT935G have been concluded into several points as follow. (1)Its continuous power dissipation would be 80mW and it would be 1.0mW/°C derate above 25°C. (2)Its maximum voltage would be 100V for peak. (3)ts operating temperature range would be from -50°C to 75°C. (4)Its storage temperature range would be from -50°C to 75°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VT935G are concluded as follow. (1)Its resistance at 10 lux, 2850K would the minimum value of 10k and the maximum value of 27k for group A and would have the minimum value of 20k and the maximum value of 38k for group B and would the minimum value of 31k and the maximum value of 50k for group C. (2)Its dark resistance (10 seconds, after removal of 10 lux) would be min 1.0M. (3)Its sensitivity would be typ 0.9. (4)Its peak spectral response (type 3) would have the typ value of 550nm. And so on.

At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!