Features: SpecificationsDescriptionThe VT6208 is a kind of high speed static RAM organized as 65,536 words by four bits. There are some features as follows. First is high speed access and cycle times which is 35 and 45 ns (max). The second is 1.2 CMOS process. Then is fully static operation. Next ...
VT6208: Features: SpecificationsDescriptionThe VT6208 is a kind of high speed static RAM organized as 65,536 words by four bits. There are some features as follows. First is high speed access and cycle time...
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The VT6208 is a kind of high speed static RAM organized as 65,536 words by four bits. There are some features as follows. First is high speed access and cycle times which is 35 and 45 ns (max). The second is 1.2 CMOS process. Then is fully static operation. Next is chip enable input, automatic power down when disabled. The fifth is CMOS process for low power which means 300 mW (typical) active, 100W (typical) standby and 10 W (typical) CMOS standby. The sixth is single 5 V±10% power supply. The seventh is fully TTL compatible. The eighth is battery back-up operation (VT6208L). The last one is 24-lead, 300 mil plastic DIP.
What comes next is the absolute maximum ratings of VT6208. The voltage on VCC relative to GND is from -0.5 to +7 V. The voltage on any pin relative to GND is from -0.5 to VCC+1 V. The storage temperature is from -55 to +125. The storage temperature under bias is from -10 to +85. The power dissipation is 1.0 W.
The following is about the DC characteristics (TA=0 to 70, VCC= 5 V±10%). The minimum VIL (input low voltage) is -0.5 V and the maximum is 0.8 V. The minimum VOL (output low voltage) is 2.2 V and the maximum is 6.0 V. The maximum VOL (output low voltage) is 0.4 V at IOL=8 mA. The minimum VOH (output high voltage) is 2.4 V at IOH=-4.0 mA. The minimum ILI (input leakage current) is -2.0A and the maximum is 2.0A when VCC=max, VIN=GND to VCC.