VT361716

The VT361716 is designed as high speed synchronous dynamic random access memory (SDRAM), organized as 512K words x2 banks x16 bits. Using pipelined architecture technology. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1,2,4,8 or full page when a bank and row is selected by an ACTIVE command. By having a programmable mode register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance.

VT361716 has thirteen features. (1)3.3V+/-0.3V power supply. (2)524,288 words x2banks x16 bits organization. (3)Two banks operation. (4)Power-down mode. (5)Sequential and interleave burst. (6)CAS latency 2 and 3. (7)4K refresh cyces/64ms. (8)Auto&self refresh. (9)DQM for masking. (10)Burst length 1,2,4,8 and full page. (11)Burst read single-bit write operation. (12)LVTTL compatible with multiplexed address. (13)All inputs are sample at the positive going edge of the system clock. Those are all the main features.

Some absolute maximum ratings of VT361716 have been concluded into several points as follow. (1)Its voltage on any pin relative to Vss would be from -0.3V to 3.6V. (2)Its supply voltage relative to Vss would be from -0.3V to 3.6V. (3)Its short circuit current would be 50mA. (4)Its power dissipation would be 1.0W. (5)Its operating temperature range would be from 0°C to 60°C. (6)Its storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VT361716 are concluded as follow. (1)Its supply voltage would be min 3.0V and typ 3.3V and max 3.6V. (2)Its input high voltage would be min 2.0V and max Vdd+0.3V. (3)Its input low voltage would be min -0.3V and max 0.8V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!