VT3060G

The VT3060G is designed as one kind of dual high-voltage trench MOS barrier schottky rectifiers for use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

VT3060G has six features. (1)Trench MOS schottky technology. (2)Low forward voltage drop, low power losses. (3)High efficiency operation. (4)Solder bath temperature 275°C max. 10s, per JESD 22-B106. (5)Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC. (6)Halogen-free according to IEC 61249-2-21 definition. Those are all the main features.

Some absolute maximum ratings of VT3060G have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 60V. (2)Its maximum average forward rectified current would be 30A per device and would be 15A per diode. (3)Its peak forward surge current 8.3ms single half sine-wave superimposed on rated load would be 150A. (4)Its voltage rate of change (rated Vr) would be 10000V/us. (5)Its operating junction and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VT3060G are concluded as follow. (1)Its instantaneous forward per diode would be typ 0.49V at If=5A, Ta=25°C and would be typ 0.53V at If=7.5A and would be typ 0.65V and max 0.73V at If=15A, Ta=25°C and would be typ 0.40V at If=5A, Ta=125°C and would be typ 0.61V and max 0.69V at If=15A, Ta=125°C. (2)Its reverse current per diode would be max 850uA at Vr=60V, Ta=25°C and would be typ 14mA and max 40mA at Vr=60V, Ta=125°C. (3)Its typical thermal resistance would be typ 3.2°C/W per diode and would be 1.9°C/W per device. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!