Features: • Package type: surface mount• Package form: PLCC-2• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75• Peak wavelength: p = 870 nm• High reliability• High radiant power• High radiant intensity• Angle of half intensity: = ± 60°• Low forw...
VSMF4720: Features: • Package type: surface mount• Package form: PLCC-2• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75• Peak wavelength: p = 870 nm• High reliability• High...
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Parameter | Test condition | Symbol | Value | Uni |
Reverse voltage | VR | 5 | V | |
Forward current | IF | 100 | mA | |
Peak forward current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
Surge forward current | tp = 100 s | IFSM | 1 | A |
Power dissipation | PV | 160 | mW | |
Junction temperature | Tj | 100 | ||
Operating temperature range | Tamb | - 40 to + 85 | ||
Storage temperature range | Tstg | - 40 to + 100 | ||
Soldering temperature | Acc. figure 8, J-STD-020B | Tsd | 260 | |
Thermal resistance junction/ambient | J-STD-051, soldered on PCB | RthJA | 250 | K/W |
VSMF4720 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). A 19" chip provides outstanding low forward voltage and radiant intensity even at 1 A pulse current.