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VSMF4720

Features: • Package type: surface mount• Package form: PLCC-2• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75• Peak wavelength: p = 870 nm• High reliability• High radiant power• High radiant intensity• Angle of half intensity: = ± 60°• Low forw...

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SeekIC No. : 004543659 Detail

VSMF4720: Features: • Package type: surface mount• Package form: PLCC-2• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75• Peak wavelength: p = 870 nm• High reliability• High...

VSMF4720 Data Sheet

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Part Number:
VSMF4720
Supply Ability:
5000

Price Break

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC




Application

• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors




Specifications

Parameter Test condition Symbol Value Uni
Reverse voltage VR 5 V
Forward current IF 100 mA
Peak forward current tp/T = 0.5, tp = 100 s IFM 200 mA
Surge forward current tp = 100 s IFSM 1 A
Power dissipation PV 160 mW
Junction temperature Tj 100
Operating temperature range Tamb - 40 to + 85
Storage temperature range Tstg - 40 to + 100
Soldering temperature Acc. figure 8, J-STD-020B Tsd 260
Thermal resistance junction/ambient J-STD-051, soldered on PCB RthJA 250 K/W
Note:Tamb = 25, unless otherwise specified




Description

VSMF4720 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). A 19" chip provides outstanding low forward voltage and radiant intensity even at 1 A pulse current.



High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero




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