VSKV56

Features: • High voltage• Industrial standard package• Thick Al metal die and double stick bonding• Thick copper baseplate• UL E78996 approved• 3500 VRMS isolating voltage• Totally lead (Pb)-free• Designed and qualified for industrial levelSpecificat...

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SeekIC No. : 004543643 Detail

VSKV56: Features: • High voltage• Industrial standard package• Thick Al metal die and double stick bonding• Thick copper baseplate• UL E78996 approved• 3500 VRMS isolatin...

floor Price/Ceiling Price

Part Number:
VSKV56
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• High voltage
• Industrial standard package
• Thick Al metal die and double stick bonding
• Thick copper baseplate
• UL E78996 approved
• 3500 VRMS isolating voltage
• Totally lead (Pb)-free
• Designed and qualified for industrial level



Specifications

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
VSKU/V41 VSKU/V56
Maximum average on-state current
at case temperature
IT(AV) 180° conduction, half sine wave 45 60 A
Maximum RMS on-state current IF(RMS) DC
TC
70
82
95
80
Maximum peak, one-cycle
non-repetitive surge current
IFSM t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms
No voltage
reapplied



100 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
850

890

715

750
1310

1370

1100

1150
A
TJ = 25 ,
no voltage reapplied
940

985
1450

1520
Maximum I2t for fusing I2t t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms
No voltage
reapplied



100 % VRRM
reapplied
  3.61

3.30

2.56

2.33
8.56

7.82

6.05

5.53
kA2s
TJ = 25 ,
no voltage reapplied
4.42

4.03
10.05

9.60
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 36.1 85.6 kA2s
Maximum value of threshold voltage VF(TO) (2)

Low level (3)

High level (4)
TJ = TJ maximum 0.88

0.91
0.85

0.88
V
Maximum value of on-state
slope resistance
rt1(2)
Low level (3)

High level (4)
5.90

5.74
3.53

3.41
m
Maximum peak on-state voltage VFM ITM = x
IT(AV)
TJ = 25 1.84 1.54 V
ITM = x
IF(AV)
Maximum non-repetitive rate of rise
of turned on current
dI/dt TJ = 25 , from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA,
tr < 0.5 s, tp > 6 s
150 A/s
Maximum holding current

Typical latching current
IH

IL
TJ = 25 , anode supply = 6 V,
resistive load, gate open circuit
TJ = 25 , anode supply 12 V resistive load
200

400
mA



Description

MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAKTM module VSKV56 combine the excellent thermal performance obtained by the usage of direct bonded copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid copper baseplate at the bottom side of the device.

The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness
and improved thermal spread.

The Generation 5 of ADD-A-PAK module VSKV56 is manufactured without hard mold, eliminating in this way any possible direct
stress on the leads.

The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP modules.

ELECTRICAL DESCRIPTION
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.




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