VSKT250-16PBF

Mounting Style : Chassis
On-State RMS Current (It RMS) : 555 A
Non Repetitive On-State Current : 8500 A
Breakover Current IBO Max : 8900 A
Off-State Leakage Current @ VDRM IDRM : 50 mA
On-State Voltage : 1.44 V
Holding Current (Ih Max) : 500 mA
Gate Trigger Voltage (Vgt) : 3 V
Gate Trigger Current (Igt) : 200 mA
Maximum Operating Temperature : + 130 C
Package / Case : MAGN-A-PAK
Rated Repetitive Off-State Voltage VDRM : 1.6 kV


Features:

·High voltage
·Electrically isolated base plate
·3500 VRMS isolating voltage
·Industrial standard package
·Simplified mechanical designs, rapid assembly
·High surge capability
·Large creepage distances
·Lead (Pb)-free
·Designed and qualified for industrial level


Description

This new VSKT250-16PbF series of MAGN-A-PAK^TM modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders,motor drives, UPS, etc.