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VSC8062

Features: • Serial Data Rate up to 2.5Gb/s• 16-Bit Wide ECL 100K Compatible Parallel Data Interface• Differential High-Speed Data Outputs• Differential or Single-Ended High-Speed Data and Clock Inputs• On-Chip Phase Detector (VSC8061 Multiplexer)• Power Dissipat...

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SeekIC No. : 004543435 Detail

VSC8062: Features: • Serial Data Rate up to 2.5Gb/s• 16-Bit Wide ECL 100K Compatible Parallel Data Interface• Differential High-Speed Data Outputs• Differential or Single-Ended High-S...

VSC8062 Data Sheet

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Part Number:
VSC8062
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

• Serial Data Rate up to 2.5Gb/s
• 16-Bit Wide ECL 100K Compatible Parallel Data Interface
• Differential High-Speed Data Outputs
• Differential or Single-Ended High-Speed Data and Clock Inputs
• On-Chip Phase Detector (VSC8061 Multiplexer)
• Power Dissipation: VSC8061:2.0W(max), VSC8062: 1.7W(max)
• Standard ECL Power Supplies: VEE = -5.2V, VTT = -2.0V
• Commercial (0oC to +70oC) or Industrial (-40oC to +85o C) Temperature Range
• Available in 52-Pin Ceramic Leaded Chip Carrier or 52-Pin Plastic Quad Flat Pack Packages


Pinout

Connection Diagram




Specifications

Power Supply Voltage (VTT) .......................................................... -3.0V to 0.5V
Power Supply Voltage (VEE) ..................................................VTT + 0.7V to -7.0V
Input Voltage Applied (2) (VECLIN) ................................................ -2.5V to 0.5V
High-Speed Input Voltage Applied (2) (VHSIN) .................VEE-0.7V to VCC +0.7V
Output Current, IOUT (DC, output HI) ........................................................-50mA
Case Temperature Under Bias (TC)............................................... -55 to 125
Storage Temperature (TSTG) ........................................................ -65 to 150


Description

The VSC8061 and VSC8062 are high-speed interface devices capable of data rates up to 2.5Gb/s. The devices are fabricated in gallium arsenide using the Vitesse H-GaAs E/D MESFET process to achieve highspeed and low power dissipation. For ease of system design using these products, both devices use industrystandard -5.2V and -2V power supplies, and have ECL-compatible I/O for parallel data interfaces. Typical applications include telecommunication transmission and instrumentation.




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