DescriptionThe VSC4500 is a kind of LSI ASIC suited for applications which require high levels of complexity coupled with lower state-of-the-art performance. The device is a member of the LP (low power) series gate arrays offered by Vitesse Semiconductor Corporation. The arrays interface with TTL ...
VSC4500: DescriptionThe VSC4500 is a kind of LSI ASIC suited for applications which require high levels of complexity coupled with lower state-of-the-art performance. The device is a member of the LP (low po...
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The VSC4500 is a kind of LSI ASIC suited for applications which require high levels of complexity coupled with lower state-of-the-art performance. The device is a member of the LP (low power) series gate arrays offered by Vitesse Semiconductor Corporation. The arrays interface with TTL and ECL signal levels and power supplies. Besides, they can easily be designed into systems using these technologies without any additional system requirements. The LP series offers the same level of performance of leading-edge ECL arrays with 1/3 to 1/4 of the power dissipation.
There are some features of VSC4500 as follows: (1)superior performance: high speed, high density, very low power dissipation; (2)proven GaAd E/D MESFET process; (3)array performance: flip-flop toggle rates: 943 MHz @ 4.0 mW typical; typical gate delay: 120 ps @ 0.34 mW (2-input NOR); ECL inputs/outputs at 1 GHz; TTL inputs/outputs at 100 MHz; typical delay-power product: to 0.03 pJ (2-input NOR); (4)100% utilization possible; (5)programmable input/output interface: TTL or ECL (10K, 10KH, or 100K); mixed ECL and TTL; (6)three temperature range: commercial: 0 to +70; industrial: -40 to +85; military; -55 to +125; (7)Mil-Std-883C, level B screening and qualification available; (8)fully supported on MENTOR, DAISY or VALID CAD platforms.
What comes next is the absolute maximum ratings of VSC4500 : (1)power supply voltage (ECL), VTT: -2.5 to +0.5 V; (2)power supply voltage (TTL), VTTL: +6.0 to -0.5 V; (3)ECL input voltage applied, VECLIN: +0.5 V to VTT; (4)TTL input voltage applied, VTTLIN: +0.5 V to VTT ; (5)ECL or TTL output current, IOUT (DC, output HIGH): 50 mA; (6)maximum junction temperature, Tj: 150; (7)case temperature under bias, TC: -55 to +125; (8)storage temperature, TSTG: -65 to +150.