VSB3200S

The VSB3200S is designed as one kind of high voltage trench MOS barrier schottky rectifiers for use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.

VSB3200S has six features. (1)Trench MOS schottky technology. (2)Low forward voltage drop, low power losses. (3)High efficiency operation. (4)Solder dip 275°C max. 10 s, per JESD 22-B106. (5)Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC. (6)Halogen-free according to IEC 61249-2-21 definition. Those are all the main features.

Some absolute maximum ratings of VSB3200S have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 200V. (2)Its maximum DC forward current would be 3.0A. (3)Its peak forward surge current 8.3ms single half sine-wave superimposed on rated load would be 50A. (4)Its voltage rate of change (rated Vr) would be 10000V/us. (5)Its operating junction and storage temperature range would be from -40°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VSB3200S are concluded as follow. (1)Its breakdown voltage would be typ 200V. (2)Its instantansour forward voltage would be typ 0.98V and max 1.4V at If=3.0A, Ta=25°C and would be typ 0.64V and max 0.72V at If=3.0A, Ta=125°C. (3)Its reverse current per diode typ 1.3uA and max 50uA at Vr=200V, Ta=25°C and would be typ 0.98mA and max 7mA at Vr=200V, Ta=125°C. (4)Its typical juction capacitance would be typ 170pF. (5)Its typical thermal resistance would be 64°C/W for junction to ambient. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please visit our website and contact us for details. Thank you!