VQ3001P

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Transistor Polarity : N and P-Channel
Configuration : Quad
Resistance Drain-Source RDS (on) : 2 Ohms
Drain-Source Breakdown Voltage : +/- 30 V
Package / Case : SBCDIP-14
Continuous Drain Current : - 0.37 A


Features:

Low On-Resistance: 0.8/1.6
Low Threshold: 1.5/3.1 V
Low Input Capacitance: 38/60 pF
Fast Switching Speed: 9/16 ns
Low Input and Output Leakage


Application

Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays


Pinout




Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Single		Total Quad	Unit
			N-Channel	P-Channel	VQ3001J/P
Drain-Source Voltage		VDS	30	30		V
Gate-Source Voltage	VQ3001J	VGS	±20	±30
	VQ3001P		±20	±20
Continuous Drain Currentd (TJ = 150)	TA = 25	ID	0.85	-0.6		A
	TA= 100		0.52	-0.37
Pulsed Drain Current		IDM	3	-2
Power Dissipation	TA= 25	PD	1.3	1.3	2	W
	TA = 100		0.52	0.52	0.8
Thermal Resistance, Junction-to-Ambient		RthJA	96.2	96.2	62.5	/W
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 155