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VQ1001J

MOSFET QD 30V 0.83A

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SeekIC No. : 00165399 Detail

VQ1001J: MOSFET QD 30V 0.83A

VQ1001J Data Sheet

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Part Number:
VQ1001J
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.83 A
Resistance Drain-Source RDS (on) : 1 Ohms Configuration : Quad
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PDIP-14    

Description

Packaging :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Configuration : Quad
Resistance Drain-Source RDS (on) : 1 Ohms
Continuous Drain Current : 0.83 A
Package / Case : PDIP-14


Features:

 Low On-Resistance: 0.85
 Low Threshold: 1.4 V
 Low Input Capacitance: 38 pF
 Fast Switching Speed: 9 ns
 Low Input and Output Leakage


Application

 Direct Logic-Level Interface: TTL/CMOS
 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
 Battery Operated Systems
 Solid-State Relays


Pinout

Connection Diagram


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter
Symbol
Single
Total Quad
Unit
VQ1004J/P
Drain-Source Voltage
VDS
30

V
Gate-Source Voltage

VQ1001J
VGS
±30

VQ1001P

 ±20
Continuous Drain Currentd
(TJ = 175)		 TA= 25
ID
0.83

A
TA= 100
0.53

Pulsed Drain Current
IDM
3

Power Dissipation TA= 25
PD
1.3
2
W
TA = 100
0.52
0.8
Thermal Resistance, Junction-to-Ambient
RthJA
96
62.5
/W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 155



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