MOSFET 240V 0.18A 0.8W
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 240 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | - 0.18 A |
Resistance Drain-Source RDS (on) : | 10 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-226AA |
Parameter |
Symbol |
Limits |
Unit | |
Drain-Source Voltage |
VDS |
-240 |
V | |
Gate-Source Voltage |
VGS |
±20 | ||
Continuous Drain Current (TJ = 150) | TA= 25 |
ID |
0.18 |
A |
TA= 100 |
0.11 | |||
Pulsed Drain Currenta |
IDM |
0.72 | ||
Power Dissipation | TA= 25 |
PD |
0.8 |
W |
TA= 100 |
0.32 | |||
Maximum Junction-to-Ambient |
RthJA |
156 |
/W | |
Operating Junction and Storage Temperature Range |
TJ, Tstg |
55 to 150 |