VP1504

Features: ❏ Free from secondary breakdown❏ Low power drive requirement❏ Ease of paralleling❏ Low CISS and fast switching speeds❏ Excellent thermal stability❏ Integral Source-Drain diode❏ High input impedance and high gain❏ Complementary N- an...

product image

VP1504 Picture
SeekIC No. : 004542559 Detail

VP1504: Features: ❏ Free from secondary breakdown❏ Low power drive requirement❏ Ease of paralleling❏ Low CISS and fast switching speeds❏ Excellent thermal stability❏...

floor Price/Ceiling Price

Part Number:
VP1504
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices



Application

❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)



Specifications

Drain-to-Source Voltage
Drain-to-Gate Voltage
BVDSS
BVDGS
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
±20V
-55 to +150
300
* Distance of 1.6 mm from case for 10 seconds.


Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Resistors
Programmers, Development Systems
Integrated Circuits (ICs)
Cables, Wires - Management
Memory Cards, Modules
RF and RFID
View more