VP1316N2

DescriptionThe VP1316N2 is designed as one kind of P-channel enhancement-mode vertical DMOS power FETs. This enhancement mode (normally off) power transistors utilize a vertical DMOS structure and supertex's well-proven silicon-gate manufacturing process.VP1316N2 has eight features. (1)Freedom fro...

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SeekIC No. : 004542556 Detail

VP1316N2: DescriptionThe VP1316N2 is designed as one kind of P-channel enhancement-mode vertical DMOS power FETs. This enhancement mode (normally off) power transistors utilize a vertical DMOS structure and s...

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Part Number:
VP1316N2
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Description

The VP1316N2 is designed as one kind of P-channel enhancement-mode vertical DMOS power FETs. This enhancement mode (normally off) power transistors utilize a vertical DMOS structure and supertex's well-proven silicon-gate manufacturing process.

VP1316N2 has eight features. (1)Freedom from secondary breakdown. (2)Low power drive requirement. (3)Ease of paralleling. (4)Low Viss and fast switching speeds. (5)Excellent internal stability. (6)Integral source drain diode. (7)High input impedance and high gain. (8)Complementary N- and P-channel devices. Those are all the main features.

Some absolute maximum ratings of VP1316N2 have been concluded into several points as follow. (1)Its drain to source voltage would be BVdss. (2)Its drain to gate voltage would be BVdgs. (3)Its gate to source voltage would be +/-20V. (4)Its operating temperature range would be from -55°C to 150°C. (5)Its storage temperature range would be from -55°C to 150°C. (6)Its soldering temperature would be 300°C. VP1316N2 should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VP1316N2 are concluded as follow. (1)Its drain to source breakdown voltage would be min -200V for VP1320 and min -160V for VP1316. (2)Its gate threshold voltage would be min -1.5V and max -3.5V. (3)Its change in Vgs(th) with temperature would be typ -4.0mV/°C and max -5mV/°C. (4)Its gate body leakage would be max -100nA. (5)Its zero gate voltage drain current would be max -10uA. (6)Its on-state drain current would be min -50mA and typ -100mA at Vgs=-5V and it would be min -100mA and typ -400mA at Vgs=-10V. (7)Its static drain to source on-state resistance would be typ 65 and max 100 at Vgs=-5V and it would be typ 60 and max 100 at Vgs=-10V. (8)Its change in Rds(on) with temperature would be typ 0.6%/°C and max 1.0%/°C. (9)Its forward transconductance would be min 20m and typ 30m. And so on. If you have any question or suggestion or want to know more information of VP1316N2 please contact us for details. Thank you!




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