VP1216ND

The VP1216ND is designed as one kind of P-channel enhancement-mode vertical DMOS power FETs. This enhancement mode (normally off) power transistors utilize a vertical DMOS structure and supertex's well-proven silicon-gate manufacturing process.

VP1216ND has eight features. (1)Freedom from secondary breakdown. (2)Low power drive requirement. (3)Ease of paralleling. (4)Low Viss and fast switching speeds. (5)Excellent internal stability. (6)Integral source drain diode. (7)High input impedance and high gain. (8)Complementary N- and P-channel devices. Those are all the main features.

Some absolute maximum ratings of VP1216ND have been concluded into several points as follow. (1)Its drain to source voltage would be BVdss. (2)Its drain to gate voltage would be BVdgs. (3)Its gate to source voltage would be +/-20V. (4)Its operating temperature range would be from -55°C to 150°C. (5)Its storage temperature range would be from -55°C to 150°C. (6)Its soldering temperature would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VP1216ND are concluded as follow. (1)Its drain to source breakdown voltage would be min -200V for VP1220 and min -160V for VP1216. (2)Its gate threshold voltage would be min -1.5V and max -3.5V. (3)Its change in Vgs(th) with temperature would be typ -3.5mV/°C and max -4.5mV/°C. (4)Its gate body leakage would be max -100nA. (5)Its zero gate voltage drain current would be max -100uA. (6)Its on-state drain current would be min -0.5A and typ -1.0A at Vgs=-5V and it would be min -4.0A and typ -7A at Vgs=-10V. (7)Its static drain to source on-state resistance would be typ 2 and max 4 at Vgs=-5V and it would be typ 1.6 and max 2.5 at Vgs=-10V. (8)Its change in Rds(on) with temperature would be typ 0.5%/°C and max 1.0%/°C. (9)Its forward transconductance would be min 0.8 and typ 1.2. And so on. If you have any question or suggestion or want to know more information of VP1216ND please contact us for details. Thank you!