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VP1008L

MOSFET 100V 5 OHM

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SeekIC No. : 00164785 Detail

VP1008L: MOSFET 100V 5 OHM

VP1008L Data Sheet

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Part Number:
VP1008L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.28 A
Resistance Drain-Source RDS (on) : 5000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-226AA-3    

Description

Packaging :
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 0.28 A
Resistance Drain-Source RDS (on) : 5000 mOhms
Package / Case : TO-226AA-3


Features:

` High-Side Switching
` Low On-Resistance: 2.5
` Moderate Threshold: 3.4 V
` Fast Switching Speed: 40 ns
` Low Input Capacitance: 75 pF




Application

· Drivers: Relays, Solenoids, Lamps, Hammers,
· Displays, Memories, Transistors, etc.
· Battery Operated Systems
· Power Supply, Converter Circuits
· Motor Control




Specifications

Parameter Symbol VP0808L VP1008L Unit
Drain-Source Voltage VDS -80 -100 V
Gate-Source Voltage
 VGS ±30 ±30
Continuous Drain Current (TJ = 150) TA= 25 ID -0.28 -0.28 A
TA= 100 -0.17 -0.17
Pulsed Drain Currenta IDM -3 -3
Power Dissipation TA= 25 PD 0.8 0.8 W
TA= 100 0.32 0.32
Maximum Junction-to-Ambient RthJA 156 156 /W
Maximum Junction-to-Case RthJC    
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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