MOSFET 100V 5 OHM
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 0.28 A |
Resistance Drain-Source RDS (on) : | 5000 mOhms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-226AA-3 |
` High-Side Switching
` Low On-Resistance: 2.5
` Moderate Threshold: 3.4 V
` Fast Switching Speed: 40 ns
` Low Input Capacitance: 75 pF
· Drivers: Relays, Solenoids, Lamps, Hammers,
· Displays, Memories, Transistors, etc.
· Battery Operated Systems
· Power Supply, Converter Circuits
· Motor Control
Parameter | Symbol | VP0808L | VP1008L | Unit | |
Drain-Source Voltage | VDS | -80 | -100 | V | |
Gate-Source Voltage |
VGS | ±30 | ±30 | ||
Continuous Drain Current (TJ = 150) | TA= 25 | ID | -0.28 | -0.28 | A |
TA= 100 | -0.17 | -0.17 | |||
Pulsed Drain Currenta | IDM | -3 | -3 | ||
Power Dissipation | TA= 25 | PD | 0.8 | 0.8 | W |
TA= 100 | 0.32 | 0.32 | |||
Maximum Junction-to-Ambient | RthJA | 156 | 156 | /W | |
Maximum Junction-to-Case | RthJC | ||||
Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 |