VNW100N04

Transistor Polarity :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Configuration :
Maximum Operating Temperature :
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.012 Ohms
Drain-Source Breakdown Voltage : 42 V


Features:

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:
 - OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.

 - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T_jsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 170oC. The device is automatically restarted when the chip temperature falls below 155oC.

- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the
voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).

Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (Vin = 0)	Internally Clamped	V
Vin	Input Voltage	18	V
ID	Drain Current	Internally Limited	A
IR	Reverse DC Output Current	-100	A
Vesd	Electrostatic Discharge (C= 100 pF, R=1.5 K)	2000	V
Ptot	Total Dissipation at Tc = 25	208	W
Tj	Operating Junction Temperature	Internally Limited
Tc	Case Operating Temperature	Internally Limited
TSTG	Storage Temperature	-55 to 150

Description

The VNW100N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback of VNW100N04 can be detected by monitoring the voltage at the input pin.

Parameters:

Technical/Catalog Information	VNW100N04
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	TO-247-3
Mounting Type	Through Hole
Type	Low Side
Voltage - Supply	-
On-State Resistance	12 mOhm
Current - Output / Channel	-
Current - Peak Output	50A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VNW100N04 VNW100N04