VNK7N04FM

The VNK7N04FM is monolithic devices made using SGS-THOMSON vertical intelligent power M0 technology,intended for replacement of standard power MOSFETS in DC to 50KHz applications.

Features of the VNK7N04FM are:(1)linear current limitation;(2)thermal shut down;(3)short circuit protection;(4)integrated clamp;(5)low current drawn from input pin;(6)diagnostic feedback through input pin;(7)esd protection;(8)direct access to the gate of the power mosfet (analog driving);(9)compatible with standard power mosfet. 

The absolute maximum ratings of the VNK7N04FM can be summarized as:(1):the symbol is VDS,the parameter is drain-source voltage (Vin=0),the value is internally clamped,the unit is V;(2):the symbol is VIN,the parameter is input voltage,the value is 18,the unit is V;(3):the symbol is ID,the parameter is drain current,the value is internally limited,the unit is A;(4):the symbol is IR,the parameter is reverse DC output current,the value is -7,the unit is A;(5):the symbol is Vesd,the parameter is electrostatic discharge (C=100pF,R=1.5K),the value is 2000,the unit is V;(6):the symbol is Ptot,the parameter is total dissipation at Tc = 25,the value is 9,the unit is W;(7):the symbol is Tstg,the parameter is storage temperature,the value is -55 to 150,the unit is ;(8):the symbol is Tj,the parameter is operating junction temperature,the value is internally limited,the unit is ;(9):the symbol is Tc,the parameter is case operating temperature,the value is internally limited,the unit is .