Features: · LINEAR CURRENT LIMITATION· THERMAL SHUT DOWN· SHORT CIRCUIT PROTECTION· INTEGRATED CLAMP· LOW CURRENT DRAWN FROM INPUT PIN· DIAGNOSTIC FEEDBACK THROUGH INPUT PIN· ESD PROTECTION· DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)· COMPATIBLE WITH STANDARD POWER MOSFET· STAN...
VNH70N07: Features: · LINEAR CURRENT LIMITATION· THERMAL SHUT DOWN· SHORT CIRCUIT PROTECTION· INTEGRATED CLAMP· LOW CURRENT DRAWN FROM INPUT PIN· DIAGNOSTIC FEEDBACK THROUGH INPUT PIN· ESD PROTECTION· DIRECT ...
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Symbol | Parameter |
Value |
Unit |
VDS | Drain-source Voltage (Vin = 0) |
Internally Clamped |
V |
Vin | Input Voltage |
18 |
V |
ID | Drain Current |
Internally Limited |
A |
IR | Reverse DC Output Current |
-50 |
A |
Vesd | Electrostatic Discharge (C= 100 pF, R=1.5 K) |
2000 |
V |
Ptot | Total Dissipation at Tc = 25 |
208 |
W |
Tj | Operating Junction Temperature |
Internally Limited |
|
TC | Case Operating Temperature |
Internally Limited |
|
Tstg | Storage Temperature |
-55 to 150 |
The VNH70N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Buit-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback of VNH70N07 can be detected by monitoring the voltage at the input pin.