VND670SP

Rise Time :
Fall Time :
Supply Voltage - Max :
Supply Voltage - Min :
Maximum Power Dissipation :
Maximum Operating Temperature :
Mounting Style : SMD/SMT
Packaging : Tube
Product : H-Bridge Drivers
Package / Case : PowerSO-10
Supply Current : 40 mA
Type : Dual High Side Switch With Dual Power Mos


Specifications

Symbol	Parameter	Value	Unit
VCC	Supply voltage	-0.3 .. 40	V
Imax1	Maximum output current (continuous)	15	A
Imax2	Maximum output current (250 ms pulse duration)	20	A
IR	Reverse output current (continuous)	-15	A
IIN	Input current	+/- 10	mA
IEN	Enable pin current	+/- 10	mA
Ipw	PWM input current	+/- 10	mA
Igs	Output gate current	+/- 20	mA
VESD	Electrostatic discharge (R=1.5k, C=100pF)	2000	V
Tj	Junction operating temperature	-40 to 150
TSTG	Storage Temperature	-55 to 150

Description

The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The VND670SP device integrates two 30 mW Power MOSFET in high side configuration, and provides gate drive for two external Power MOSFET used as low side switches. IN_A and INB allow to select clockwise or counter clockwise drive or brake; DIAG_A/EN_A, DIAG_B/EN_B allow to disable one half bridge and feedback diagnostic. Built-in thermal shut-down, combined with a current limiter, protects the chip in overtemperature and short circuit conditions. Short to battery protects the external connected low-side Power MOSFET.

Parameters:

Technical/Catalog Information	VND670SP
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	PowerSO-10 Exposed Bottom Pad
Mounting Type	Surface Mount
Type	High Side
Voltage - Supply	5.5 V ~ 36 V
On-State Resistance	26 mOhm
Current - Output / Channel	15A
Current - Peak Output	45A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	2
Operating Temperature	-40°C ~ 150°C
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VND670SP VND670SP