DescriptionThe VND5025B1 is designed as one kind of double channel high side driver device with analog current sense. And this device is intended for driving resistive or inductive loads with one side connected to ground. Also it detects open load condition both in on and off state, when STAT_DIS ...
VND5025B1: DescriptionThe VND5025B1 is designed as one kind of double channel high side driver device with analog current sense. And this device is intended for driving resistive or inductive loads with one si...
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The VND5025B1 is designed as one kind of double channel high side driver device with analog current sense. And this device is intended for driving resistive or inductive loads with one side connected to ground. Also it detects open load condition both in on and off state, when STAT_DIS is left open or driven low. And it can be used in all types of resistive, inductive and capacitive loads applications.
Features of the VND5025B1 are:(1)Inrush current active management by power limitation; (2)Very low stand-by current; (3)3.0V CMOS compatible input; (4)Optimized electromagnetic emission; (5)Very low electromagnetic susceptibility; (6)In compliance with the 2002/95/ec european directive.
The absolute maximum ratings of the VND5025B1 can be summarized as:(1)DC Supply Voltage: 41 V;(2)Reverse DC Supply Voltage: 0.3 V;(3)DC Reverse Ground Pin Current: 200 mA;(4)DC Output Current: Internally Limited A;(5)Reverse DC Output Current: 15 A;(6)DC Input Current: +10 / -1 mA;(7)DC Status Current: +10 / -1 mA;(8)Charge device model: 750 V;(9)Junction Operating Temperature: -40 to 150 °C;(10)Storage Temperature: - 55 to 150 °C. If you want to know more information such as the electrical characteristics about the VND5025B1, please download the datasheet in www.seekic.com or www.chinaicmart.com.