VND10N06-1

On Time (Max) :
Off Time (Max) :
Operating Supply Voltage :
Maximum Operating Temperature :
Number of Outputs : 1
Mounting Style : Through Hole
On Resistance (Max) : 0.15 Ohms
Supply Current (Max) : 0.15 mA
Package / Case : TO-251


Features:

During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as V_IN > V_IH.

The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current (typically 150 mA) flows into the INPUT pin in order to supply the internal circuitry.

During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET.

In this condition, the Power MOSFET gate is set to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V. The device integrates an active current limiter circuit which limits the drain current I_D to Ilim whatever the INPUTpin Voltage.

When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T_jsh.

If T_j reaches T_jsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when T_j has cooled down to T_jrs

Specifications

Symbol		Parameter	Value			Unit
			DPAK IPAK	ISOWATT220	SOT82-FM
VDS		Drain-source Voltage (Vin = 0)	Internally Clamped			V
VIN		Input Voltage	Internally Clamped			V
Iin		Input Current	±20			mA
ID		Drain Current	Internally Clamped			A
IR		Reverse DC Output Current	-15			A
Vesd		Electrostatic discharge(C= 100 pF, R=1.5 K)	4000			V
Ptot		Total Dissipation at TC=25°C	35	27	9	W
Tj		Operating Junction Temperature	Internally Limited
TC		Case operating temperature	Internally Limited
Tstg		Storage Temperature	-55 to 150

Description

The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Parameters:

Technical/Catalog Information	VND10N06-1
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Mounting Type	Through Hole
Type	Low Side
Voltage - Supply	-
On-State Resistance	150 mOhm
Current - Output / Channel	-
Current - Peak Output	10A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VND10N06 1 VND10N061