VNB10N07

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 100 mOhms
Drain-Source Breakdown Voltage : 70 V


Features:

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (I_iss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T_jsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.

- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R_DS(on)).

Specifications

Symbol		Parameter	Value			Unit
			PowerSO-10 D2PAK	SOT-82FM	ISOWATT220
VDS		Drain-source Voltage (Vin = 0)	Internally Clamped			V
VIN		Input Voltage	18			V
ID		Drain Current	Internally Limited			A
IR		Reverse DC Output Current	-14			A
Vesd		Electrostatic discharge(C= 100 pF, R=1.5 K)	2000			V
Ptot		Total Dissipation at TC=25°C	50	9.5	31	W
Tj		Operating Junction Temperature	Internally Limited
TC		Case operating temperature	Internally Limited
Tstg		Storage Temperature	-55 to 150

Description

The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.Fault feedback can be detected by monitoring the voltage at the input pin.

Parameters:

Technical/Catalog Information	VNB10N07
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Mounting Type	Surface Mount
Type	Low Side
Voltage - Supply	-
On-State Resistance	100 mOhm
Current - Output / Channel	-
Current - Peak Output	10A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VNB10N07 VNB10N07