MOSFET 500V 0.33A 0.8W
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V |
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 0.033 A |
Resistance Drain-Source RDS (on) : | 300000 mOhms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-226AA-3 |
Parameter | Symbol | 2N6661 | VN88AFD | Unit | |
Drain-Source Voltage | VDS | 500 | 500 | V | |
Gate-Source Voltage | VGS | ±30 | ±30 | ||
Continuous Drain Current(TJ = 150) | TA= 25 | ID | 0.033 | 0.022 | A |
TA= 100 | 0.021 | 0.013 | |||
Pulsed Drain Currenta | IDM | 0.013 | 0.08 | ||
Power Dissipation | TA= 25 | PD | 0.8 | 0.35 | W |
TA= 100 | 0.32 | 0.14 | |||
Thermal Resistance, Junction-to-Ambient | RthJA | 156 | 350 | /W | |
Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 |