VN4012L

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 400 V
Continuous Drain Current : 0.16 A
Package / Case : TO-226AA-3
Resistance Drain-Source RDS (on) : 12000 mOhms at 4.5 V


Features:

❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C_ISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices


Application

❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Telecom Switching
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,memories, displays, bipolar transistors, etc.)


Specifications

Drain-to-Source Voltage	BVDSS
Drain-to-Gate Voltage	BVDGS
Gate-to-Source Voltage	± 20V
Operating and Storage Temperature	-55°C to +150°C
Soldering Temperature*	300°C

* Distance of 1.6 mm from case for 10 seconds.