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VN3515L

MOSFET 350V 0.015A 0.8W

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SeekIC No. : 00166756 Detail

VN3515L: MOSFET 350V 0.015A 0.8W

VN3515L Data Sheet

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Part Number:
VN3515L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 350 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.15 A
Resistance Drain-Source RDS (on) : 15 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 15 Ohms
Continuous Drain Current : 0.15 A
Package / Case : TO-92
Drain-Source Breakdown Voltage : 350 V


Features:

❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices


Application

❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Telecom Switching
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,memories, displays, bipolar transistors, etc.)


Specifications

Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.


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