MOSFET 240V 200mA N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 240 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.2 A | ||
Resistance Drain-Source RDS (on) : | 10000 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Ammo |
Technical/Catalog Information | VN2410LZL1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 240V |
Current - Continuous Drain (Id) @ 25° C | 200mA |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 125pF @ 25V |
Power - Max | 350mW |
Packaging | Tape & Box (TB) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-92 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | VN2410LZL1G VN2410LZL1G VN2410LZL1GOSTR ND VN2410LZL1GOSTRND VN2410LZL1GOSTR |