VN2222L

MOSFET 60V 0.23A 0.8W

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VN2222L Picture
SeekIC No. : 00166808 Detail

VN2222L: MOSFET 60V 0.23A 0.8W

floor Price/Ceiling Price

Part Number:
VN2222L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : - 0.3 V, 15 V Continuous Drain Current : 0.27 A
Resistance Drain-Source RDS (on) : 7500 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-226AA-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Packaging : Reel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 7500 mOhms
Continuous Drain Current : 0.27 A
Package / Case : TO-226AA-3
Gate-Source Breakdown Voltage : - 0.3 V, 15 V


Features:

` Zener Diode Input Protected
` Low On-Resistance: 3
` Ultralow Threshold: 1.2 V
` Low Input Capacitance: 38 pF
` Low Input and Output Leakage



Application

· Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
· Battery Operated Systems
· Solid-State Relays
· Inductive Load Drivers



Specifications

Parameter
Symbol
VN2222L
VN0610L
VN10KLS
Unit
Drain-Source Voltage
VDS
60
60
V
Gate-Source Voltage
VGS
15/0.3
15/0.3

Continuous Drain Current (TJ = 150C)
TA= 25
ID
0.27
0.31
A
TA= 100
0.17
0.20
Pulsed Drain Currenta
IDM
1
1.0
Power Dissipation TA= 25
PD
0.8
0.9
W
TA= 100
0.32
0.4
Thermal Resistance, Junction-to-Ambient
RthJA
156
139
/W
Operating Junction and Storage Temperature Range
TJ, Tstg
55 to 150

Notes
a. Pulse width limited by maximum junction temperature.


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