VN2210N3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Resistance Drain-Source RDS (on) : 350 mOhms
Package / Case : TO-92
Continuous Drain Current : 1.2 A


Description

The VN2210N3 is one member of the VN22A series.These enhancement-mode(normally-off)power transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures,these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features of the VN2210N3 are:(1)free from secondary breakdown; (2)low power drive requirement; (3)ease of paralleling; (4)low CISS and fast switching speeds; (5)excellent thermal stability; (6)integral source-drain diode; (7)high input impedance and high gain; (8)complementary N- and P-channel devices.Supertex Vertical DMOS FETs are ideally suited fo a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

The absolute maximum ratings of the VN2210N3 can be summarized as:(1)drain-to-source voltage:BVdss;(2)storage temperature:-55 to +150;(3)operating temperature:-55 to +150;(4)drain-to-gate voltage:BVdss;(5)gate-to-source voltage:±20V;(6)soldering temperature:300.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.