Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) at Tc = 85 23 A IR Reverse Output Current at Tc = 85 -23 A IIN Input Current ±10 mA -VCC Reverse Supply Current ...
VN21SP: Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) at Tc = 85 23 A IR Reverse Output Cu...
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Symbol |
Parameter |
Value |
Unit |
V(BR)DSS |
Drain-Source Brekdown Voltage |
60 |
V |
IOUT |
Output Current (cont.) at Tc = 85 |
23 | A |
IR |
Reverse Output Current at Tc = 85 |
-23 |
A |
IIN |
Input Current |
±10 | mA |
-VCC |
Reverse Supply Current |
-4 |
V |
ISTAT |
Status Current |
±10 | mA |
VESD |
Electrostatic Discharge (1.5K,100pF ) |
2000 | V |
Ptot |
Power Dissipation at TC=85°C |
48 |
W |
Tj |
Junction operating temperature |
-40 to 150 | |
Tstg |
Storage Temperature |
-55 to 150 |
|
The VN21SP is a monolithic device made using STMicroelectronics VIPower Technology,intended for driving resistive or inductive loads with one side grounded.
Built-in thermal shut-down protects the VN21SP chip from over temperature and short circuit.The open drain diagnostic output indicates: open load in off state, and in on state, output shorted to VCC and overtemperature. Fast demagnetization of inductive loads is archivied by negative (-18V) load voltage at turn-off.