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VN20N

Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 33 A IR Reverse Output Current -33 A IIN Input Current ±10 mA -VCC Reverse Supply Current -4 V ISTAT S...

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SeekIC No. : 004542382 Detail

VN20N: Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 33 A IR Reverse Output Current -33...

VN20N Data Sheet

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Part Number:
VN20N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Specifications

Symbol

Parameter

Value

Unit

V(BR)DSS

 Drain-Source Brekdown Voltage

60

V

IOUT

Output Current (cont.)

 33 A

IR

 Reverse Output Current

-33

A

IIN

Input Current

 ±10 mA

-VCC

 Reverse Supply Current

-4

V

ISTAT

Status Current

 ±10 mA
VESD

Electrostatic Discharge (1.5K,100pF )

 2000 V

Ptot

Power Dissipation at TC25°C

100

W

Tj

Junction operating temperature

 -40 to 150

Tstg

Storage Temperature

 -55 to 150




Description

The VN20N is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded.

Built-in thermal shut-down protects the VN20N chip from over temperature and short circuit.The input control is 5V logic level compatible.The open drain diagnostic output indicates open circuit (no load) and over temperature status.




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