Features: TrenchFET Power MOSFETApplication CRT Monitor HD Drive CircuitH-Drive Trans SwitchingSpecifications Parameter Symbol Value Units Drain-Source Voltage VCC 200 V Gate-Source Voltage VC 20 V Continuous Drain Current (TJ = 150°C) TA= ...
VN2001L: Features: TrenchFET Power MOSFETApplication CRT Monitor HD Drive CircuitH-Drive Trans SwitchingSpecifications Parameter Symbol Value Units Drain-Source Voltage VCC 200 ...
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Parameter |
Symbol |
Value |
Units | |
Drain-Source Voltage |
VCC |
200 |
V | |
Gate-Source Voltage
|
VC |
20
|
V
| |
Continuous Drain Current (TJ = 150°C) |
TA= 25°C | -IGND |
0.56 |
A |
TA= 100°C |
0.45 | |||
Pulsed Drain Currenta |
IOUT |
2 |
A | |
Power Dissipation |
TA= 25°C |
- IOUT |
1.5 |
W |
TA= 100°C |
0.24 | |||
Maximum Junction-to-Ambient |
IIN |
0.11 |
°C/W
| |
Operating Junction and Storage Temperature Range |
ICSD |
55 to 150 |
°C |