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VN1509

Features: o Free from secondary breakdowno Low power drive requiremento Ease of parallelingo Low CISS and fast switching speedso Excellent thermal stabilityo Integral Source-Drain diodeo High input impedance and high gaino Complementary N- and P-channel devicesApplicationo Motor controlso Converte...

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SeekIC No. : 004542376 Detail

VN1509: Features: o Free from secondary breakdowno Low power drive requiremento Ease of parallelingo Low CISS and fast switching speedso Excellent thermal stabilityo Integral Source-Drain diodeo High input ...

VN1509 Data Sheet

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Part Number:
VN1509
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

o Free from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low CISS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-channel devices


Application

o Motor controls
o Converters
o Amplifiers
o Switches
o Power supply circuits
o Drivers (relays, hammers, solenoids, lamps,memories, displays, bipolar transistors, etc.)


Specifications

Drain-to-Source Voltage.............................................. BVDSS
Drain-to-Gate Voltage .................................................BVDGS
Gate-to-Source Voltage ..............................................± 20V
Operating and Storage Temperature ......-55°C to +150°C
Soldering Temperature*............................................ 300°C


Description

These VN1509 enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex's VN1509 vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.




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