Features: o Free from secondary breakdowno Low power drive requiremento Ease of parallelingo Low CISS and fast switching speedso Excellent thermal stabilityo Integral Source-Drain diodeo High input impedance and high gaino Complementary N- and P-channel devicesApplicationo Motor controlso Converte...
VN1509: Features: o Free from secondary breakdowno Low power drive requiremento Ease of parallelingo Low CISS and fast switching speedso Excellent thermal stabilityo Integral Source-Drain diodeo High input ...
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These VN1509 enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex's VN1509 vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.