VN1316N2

These VN1316N2 enhancement-made (normally-ott) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coetitcient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally- tnduced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally suited to a wide range ot switching and amplifying applications where high break- down voltage, high input impedance, low input capacitance, and tast switching speeds are desired. The VN1316N2 can applicated in (1)motor control; (2)converters; (3)amplifiers; (4)switches; (5)power supply circuits; (6)drivers (relays, hammers, solenolds, lamps, memories, displays, bipolar transistors, etc.).

The features of VN1316N2 can be summarized as (1)freedom from secondary breakdown; (2)low power drive requirement; (3)ease of paralleling; (4)low CISS and fast switching speeds; (5)excellent thermal stability; (6)integral source-drain diode; (7)high input impedance and high gain; (8)complementary N- and P-channel devices .

The absolute maximum ratings of VN1316N2 are (1)drain-to-source voltage: BVDSs; (2)drain-to-gate voltage: BVDGS; (3)gate-to-source voltage: ±20V; (4)operating and storage temperature:-55°C to +150°C; (5)soldering temperature: 300°C(distance ot 1.6 mm from case ior 10 seconds).