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VN10LP

MOSFET N Chnl. 60V

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SeekIC No. : 00150771 Detail

VN10LP: MOSFET N Chnl. 60V

VN10LP Data Sheet

floor Price/Ceiling Price

US $ .2~.41 / Piece | Get Latest Price
Part Number:
VN10LP
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.41
  • $.35
  • $.24
  • $.2
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.27 A
Resistance Drain-Source RDS (on) : 5000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : E-Line Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 5000 mOhms
Continuous Drain Current : 0.27 A
Package / Case : E-Line


Features:

* 60 Volt VDS
* RDS(on)=5




Specifications

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous Drain Current at Tamb = 25°C ID 270 mA
Pulsed Drain Current IDM 3 A
Gate Source Voltage VGS ±20 V
Power Dissipation at Tamb = 25°C Ptot 625 mW
Operating and Storage Temperature Range TJ, Tstg -55 to +150


Part Number VN10LP
Config/
Polarity		 N
PD
(W)		 0.625
VDSS
(V)		 60
VGSS (+/-)
(V)		 20
ID
(A)		 0.27
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V
RDS(on) Max () @ VGS; 5V 7.5
RDS(on) Max () @ VGS; 10.0V 5
VGS(th)
(V)		 0.8
Ciss (typ)
(pF)		 30
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V		 0.95





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