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SeekIC No. : 00166881 Detail

VN10LLS: MOSFET 60V 0.32A 0.9W

VN10LLS Data Sheet

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Part Number:: VN10LLS
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	0.32 A
Resistance Drain-Source RDS (on) :	5000 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92S-3

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 5000 mOhms
Continuous Drain Current : 0.32 A
Package / Case : TO-92S-3

Features:

• Low On-Resistance: 2.5 •
• Low Threshold: <2.1 V
• Low Input Capacitance: 22 pF
• Fast Switching Speed: 7 ns
• Low Input and Output Leakage

Application

· Direct Logic-Level Interface: TTL/CMOS
· Solid State Relays
· Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.
· Battery Operated Systems

Specifications

Parameter		Symbol	VN10LLS	VN0605T	VN0610LL	VN2222LL	Unit
Drain-Source Voltage		V_DS	60	60	60	60	V
Gate-Source Voltage-Non-Repetitive^b		V_GSM	±30	±30	±30	±30
Gate-Source Voltage-Continuous		V_GS	±20	±20	±20	±20
Continuous Drain Current (T_J = 150)	T_A= 25	I_D	0.32	0.18	0.28	0.23	A
Continuous Drain Current (T_J = 150)	T_A= 100	I_D	0.2	0.11	0.17	0.14
Pulsed Drain Current^a		I_DM	1.4	0.72	1.3	1.0
Power Dissipation	T_A= 25	P_D	0.9	0.36	0.8	0.8	W
Power Dissipation	T_A= 100	P_D	0.4	0.14	0.32	0.32	W
Thermal Resistance, Junction-to-Ambient		R_thJA	139	350	156	156	/W
Operating Junction and Storage Temperature Range		T_J, T_stg	55 to 150

Notes
a. Pulse width limited by maximum junction temperature.
b. t_p 50s.

VN10LLS

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