VN10KE

Resistance Drain-Source RDS (on) :
Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.17 A
Package / Case : TO-206AC-3
Gate-Source Breakdown Voltage : - 0.3 V, 15 V


Description

The VN10KE is a kind of N-channel enhancement-mode MOS transistors, which has teh benefits of extra ESD protection; low offset voltage; low-voltage operation; high-speed, easily driven; low error voltage; TO-206AC and canbe applicated in drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems; solid-state relays; inductive load drivers.

The features of VN10KE can be summarized as (1)zener diode input protected; (2)low on-resistance: 3; (3)ultralow threshold: 1.2V; (4)low input capacitance: 38 pF; (5)low input and output leakage.

The absolute maximum ratings of VN10KE are (1)drain-source voltage VDS: 60V; (2)gate-source voltage VGS: 15/-0.3V; (3)continuous drain current (TJ= 150°C)TA= 25°C/TA= 100°C ID: 0.17/0.11A; (4)pulsed drain cnrrent IDM: 1A; (5)power dissipation TA= 25°C/TA= 100°C PD: 0.3/0.12W;(6)maximum junction-to-ambient RthJA: 156 °C/W; (8)operating junction and storage temperature range: TJ, Tstg: -55 to 150 °C.